▲ 85 ▼ China crafts working 3nm gate-all-around transistors without EUV — stacked nanosheets target 3nm without EUV, but full node remains distant (www.tomshardware.com) submitted 1 month ago by schizoidman@lemmy.zip to c/technology@lemmy.world 9 comments fedilink hide all child comments
[–] CosmoNova@lemmy.world 1 point 1 month ago Sadly more RAM just means more data centers these days. permalink fedilink source parent